On approach to increase integration rate of complementary gate overlap field-effect heterotransistors in the framework of a double tail comparator

Abstract

In this paper we introduce an approach to increase integration rate of complementary gate overlap field-effect heterotransistors framework a double tail comparator. In the framework of the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.